AN822
Vishay Siliconix
PowerPAK 1212 DUAL
To take the advantage of the dual PowerPAK 1212-8’s
thermal performance, the minimum recommended
land pattern can be found in Application Note 826,
Recommended Minimum Pad Patterns With Outline
Drawing Access for Vishay Siliconix MOSFETs . Click
on the PowerPAK 1212-8 dual in the index of this doc-
ument.
The gap between the two drain pads is 10 mils. This
matches the spacing of the two drain pads on the Pow-
erPAK 1212-8 dual package.
This land pattern can be extended to the left, right, and
top of the drawn pattern. This extension will serve to
increase the heat dissipation by decreasing the ther-
mal resistance from the foot of the PowerPAK to the
PC board and therefore to the ambient. Note that
increasing the drain land area beyond a certain point
will yield little decrease in foot-to-board and foot-to-
ambient thermal resistance. Under specific conditions
of board configuration, copper weight, and layer stack,
ture profile used, and the temperatures and time
duration, are shown in Figures 2 and 3. For the lead
(Pb)-free solder profile, see http://www.vishay.com/
doc?73257.
experiments have found that adding copper beyond an
area of about 0.3 to 0.5 in 2 of will yield little improve-
ment in thermal performance.
REFLOW SOLDERING
Vishay Siliconix surface-mount packages meet solder
Ramp-Up Rate
Temperature at 155 ± 15 ° C
Temperature Above 180 ° C
Maximum Temperature
Time at Maximum Temperature
Ramp-Down Rate
+ 6 ° C /Second Maximum
120 Seconds Maximum
70 - 180 Seconds
240 + 5/- 0 ° C
20 - 40 Seconds
+ 6 ° C/Second Maximum
reflow reliability requirements. Devices are subjected
to solder reflow as a preconditioning test and are then
Figure 2. Solder Reflow Temperature Profile
reliability-tested using temperature cycle, bias humid-
ity, HAST, or pressure pot. The solder reflow tempera-
10 s (max)
210 - 220 °C
140 - 170 °C
3 ° C/s (max)
1 8 3 °C
50 s (max)
4 ° C/s (max)
3° C/s (max)
60 s (min)
Reflo w Zone
Pre-Heating Zone
Maxim u m peak temperat u re at 240 °C is allo w ed.
Figure 3. Solder Reflow Temperatures and Time Durations
www.vishay.com
2
Document Number 71681
03-Mar-06
相关PDF资料
SI7905DN-T1-E3 MOSFET DUAL P-CH D-S 40V 1212-8
SI7913DN-T1-GE3 MOSFET P-CH 20V 1212-8 PPAK
SI7922DN-T1-GE3 MOSFET DL N-CH 100V PPAK 1212-8
SI7923DN-T1-GE3 MOSFET P-CH D-S 30V 1212-8 PPAK
SI7940DP-T1-E3 MOSFET 2N-CH 12V 7.6A 8SOIC
SI7945DP-T1-GE3 MOSFET DL P-CH 30V PPAK 8-SOIC
SI7948DP-T1-GE3 MOSFET N-CH DL 60V PWRPAK 8-SOIC
SI7956DP-T1-GE3 MOSFET N-CH D-S 150V 8-SOIC
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